2 inch SIC silicon carbide wafer substrate 4H-N type 50.8mm diameter 0.33mm
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2 inch SIC silicon carbide wafer substrate 4H-N type 50.8mm diameter 0.33mm

Sku. 188881
$ 368 $ 375 save   $7

Size*

2inch

Type*

4H-N

Grade*

Production Grade Research Grade Dummy Grade
Quantity:
- +
piece(s)
Stock:
10000 in Stock
Shipping:
$ 44.65
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Estimated delivery time : 4-7 working days. See details
Total Price:
$ 368 $ 375 (Save and Extra $7 )

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2 inch SIC silicon carbide wafer substrate 4H-N type 50.8mm diameter 0.33mm

2 inch SIC silicon carbide wafer substrate 4H-N type 50.8mm diameter 0.33mm

2 inch SIC silicon carbide wafer substrate 4H-N type 50.8mm diameter 0.33mm

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  • Description
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  • Wholesale Inquiry

Product Introduction

2-inch Silicon Carbide Wafer

Silicon carbide wafers are high-performance materials used in the production of electronic devices. It is made from a layer of silicon carbide on top of a silicon wafer and is available in different grades, types, and surface finishes. The flatness of the wafer is Lambda/10, which ensures the highest quality and performance of the electronics made from the wafer. Silicon carbide wafers are ideal materials for power electronics, LED technology, and advanced sensors. We provide high-quality silicon carbide wafers (silicon carbide) for the electronics and optoelectronic industries.

Key Features:

  • Higher thermal conductivity: SIC wafers have a much higher thermal conductivity than silicon, which means that SIC wafers can dissipate heat efficiently and are suitable for operation in high-temperature environments.

  • Higher electron mobility: SIC wafers have higher electron mobility than silicon, allowing SIC devices to operate at higher speeds.

  • Higher breakdown voltage: SIC wafer materials have higher breakdown voltages, making them suitable for manufacturing high-voltage semiconductor devices.

  • Higher chemical stability: SIC wafers are more chemically resistant, helping to improve device reliability and durability.

  • Wider bandgap: SIC wafers have a wider bandgap than silicon, making SIC devices perform better and more stable at high temperatures.

Applications:

Our 2-inch Silicon Carbide Wafer is designed for a wide range of applications, including:

  • Power electronic devices: SiC wafers have a wide range of applications in the field of power electronic devices such as power MOSFETs (metal oxide semiconductor field effect transistors) and SCHTKEY (Schottky barrier diodes). The high breakdown field strength and high electron saturation drift velocity of SiC material make it an ideal choice for high power density and high efficiency power converters.

  • Radio frequency (RF) devices: SiC wafers also find important applications in RF devices, such as RF power amplifiers and microwave devices. The high electron mobility and low loss of SiC materials make them excellent in high frequency and high power applications.

  • Optoelectronic devices: SiC wafers are also finding increasing applications in optoelectronic devices, such as photodiodes, ultraviolet light detectors, and laser diodes. The excellent optical properties and stability of SiC material make it an important material in the field of optoelectronic devices.
  • High temperature sensor: SiC wafers are widely used in the field of high temperature sensors due to their excellent mechanical properties and high temperature stability. SiC sensors can operate stably in high temperature, radiation, and corrosive environments and are suitable for the aerospace, energy, and industrial sectors.

  • Optical window: Sapphire's high transparency and wear resistance make it an ideal material for high-performance optical Windows, which are widely used in scientific instruments, aerospace and military equipment.Medical Devices: The biocompatibility and chemical resistance of sapphire make it suitable for use in medical instruments and equipment.

    • Radiation resistant electronic devices: The radiation resistance of SiC wafers makes them widely used in nuclear power, aerospace and other fields where radiation resistance characteristics are required. SiC material has high stability to radiation and is suitable for electronic devices in high radiation environment.

    Conclusion:

    Choose our 2-inch silicon carbide wafer for your next project to benefit from its unparalleled quality, versatility, and performance. Whether you are working in the fields of electronics, optics, or advanced manufacturing, this silicon carbide wafer will meet and exceed your expectations, providing a reliable foundation for innovation and excellence in your applications.

    Grade
    Zero MPD Grade
    Production Grade
    Research Grade
    Dummy Grade
    Diameter
    50.6mm±0.2mm
    Thickness
    1000±25um Or other customized thickness
    Wafer Orientation
    Off axis : 4.0° toward <1120> ±0.5° for 4H-N/4H-SI On axis : <0001>±0.5° for 6H-N/6H-SI/4H-N/4H-SI
    Micropipe Density
    ≤0 cm-2
    ≤2 cm-2
    ≤5 cm-2
    ≤30 cm-2
    Resistivity 4H-N
    0.015~0.028 Ω•cm
    Resistivity 4/6H-SI
    ≥1E7 Ω·cm
    Primary Flat
    {10-10}±5.0° or round shape
    Primary Flat Length
    18.5 mm±2.0 mm or round shape
    Secondary Flat Length
    10.0mm±2.0 mm
    Secondary Flat Orientation
    Silicon face up: 90° CW. from Prime flat ±5.0°
    Edge exclusion
    1 mm
    TTV/Bow /Warp
    ≤10μm /≤10μm /≤15μm
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    • Shipping Policy

      Our products are shipped from China, the dispatching date will be commenced in few business days after the finishing of QC from the related department.
      Detailed tracking information will be offered to your mailbox in an automatic manner as long as we officially dispatched your package from our sorting center.
      Customer is advised to check more tracking information from “My Account” after the account sign in.
      It occasionally comes to the situation for no displaying of tracking information after the receiving of shipment notification. Please be advised to wait for 1-2 business days until the updating of pertinent tracking information in your account center.
    • Expedited shipment

      The changing of the shipping methods may have occurred when we are noticed from customer for the needing of rush order or lower rate of shipment delay. The related request is acceptable whenever in prior of the order is dispatched and heading to the designated shipping address.
      Note: (PO) boxes or FPO/APO military addresses can only be shipped out by standard shipping method).
      The shipping fare for the expedited shipment method may higher than the standard one you chose for, then please be aware that you may ask to pay for the balance for the pertinent shipment substitution. You are welcome to contact our customer service via “contact us” for further inquiry and requisition.
    • Shipping cost all about

      It is deeply appreciated to take your kind pardon for any misunderstanding about the shipping price due to the package is shipped from China.
      The contract we have stipulated with FedEx, DHL, UPS and EMS is already set and therefore all merchandise is sent via Air rather than Ground. While this may not be the most cost effective for all customers, in terms of delivery time, ease of shipment and reliability we have determined that this is the most effective overall.
      The shipping cost for all merchandises are displayed by adding items to your shipping bag, you can estimate shipping time and cost and acquire more shipping cost information from our site.
    • International Shipping

      International shipping costs are calculated in U.S. currency based on estimated shipment weight and destination. Shipping costs for orders placed on the website are fairly accurate, but there are times when those estimates are incorrect. If we need to adjust shipping charges for your order we will contact you to authorize those additional shipping charges.

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