Si wafer silicon substrate 12 inch N type Dummy grade diameter 300mm thickness 750μm
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Si wafer silicon substrate 12 inch N type Dummy grade diameter 300mm thickness 750μm

Sku. 187830
$ 22 $ 30 save   $8

Size*

12inch

Grade*

Dummy

Type*

N
Quantity:
- +
piece(s)
( Min. Order 5 )
Stock:
10000 in Stock
Shipping:
$ 102.64
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Estimated delivery time : 4-7 working days. See details
Total Price:
$ 110 $ 150 (Save and Extra $40 )

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Si wafer silicon substrate 12 inch N type Dummy grade diameter 300mm thickness 750μm

Si wafer silicon substrate 12 inch N type Dummy grade diameter 300mm thickness 750μm

Si wafer silicon substrate 12 inch N type Dummy grade diameter 300mm thickness 750μm

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Product Description: Si wafer silicon substrate 12 inch N type Dummy grade diameter 300mm thickness 750μm

Silicon wafers are usually cut from high purity monocrystalline silicon rods. High purity monocrystalline silicon rods are prepared by Czochralski process or Float zone process, and then silicon wafers are made by cutting, polishing and other processes. Common silicon wafer diameters are 3 inches, 4 inches, 6 inches, 8 inches, 12 inches and other specifications. Wafer thickness is generally between 0.5-0.7 mm. Silicon wafers can adjust their electrical properties by mixing different impurity elements (such as phosphorus and boron) to create N-type or P-type silicon materials. This is important for the manufacture of various integrated circuits and semiconductor devices. The surface of the silicon wafer needs to be polished and cleaned to remove surface defects and contamination and ensure that the surface of the wafer is smooth.

Features:

· Crystal structure: Silicon is a typical elemental semiconductor with a regular diamond crystal structure with ordered atoms, which provides a good basis for its electronic properties.

· Electronic properties: Silicon has a band-gap width of about 1.12eV, is between an insulator and a conductor, and can generate and recombine electron-hole pairs under the action of an applied electric field, thus showing good semiconductor properties.

· Dopability: Silicon can adjust its conductive type and resistivity by incorporating Group III (e.g. B) or Group V (e.g. P, As) impurity elements, providing the possibility for the manufacture of various semiconductor devices.

· Oxidizability: Silicon can chemically react with oxygen at high temperatures to form a dense and uniform silicon dioxide (SiO2) film, which lays the foundation for silicon-based integrated circuit processes.

· Mechanical properties: Silicon has high hardness, strength and chemical stability, which is conducive to subsequent cutting, polishing and other processing processes.

· Size and size: Silicon wafers can be prepared into discs ranging in diameter from 2 inches to 12 inches to meet the needs of different processes.


Applications:


1. Sensors: Silicon-based sensors are widely used in electronic equipment, industrial control, automotive electronics and other fields, such as pressure sensors, acceleration sensors, etc.

2. Optoelectronic devices: Use the photoelectric properties of silicon materials to manufacture photodetectors, solar cells, light-emitting diodes and other optoelectronic devices.

3. Rf and microwave devices: Silicon-based chips can be used to manufacture microwave and millimeter wave integrated circuits such as RF amplifiers, switches, and power amplifiers.

4. Biomedical devices: Silicon-based biocompatibility makes it an ideal material for biosensors and implantable medical devices.


Note: Used in test experiments, there are slight scratches.


Our factory has advanced production equipment and technical team, we can provide 12 Inch N Type Polished Silicon Wafer , can be customized according to customer's specific requirements of various specifications, thickness, shape of silicon wafer.

Material:

Single crystal silicon

Growth method:

 MCZ

Direction:

 <100>

Diameter:

300 mm +/- 0.5 mm

Thickness:

750 um +/- 20 um (SSP)

Type/Dopant:

P(B)、N(P)

Resistivity:

1-25 ohm-cm

Method:

CZFZ

Grade

Prime grade/Test grade

Features:

Silicon substrate, Polished silicon wafer

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