SiC Square wafer 4H-N type Dummy grade 10×10×0.35mm silicon carbide wafer
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SiC Square wafer 4H-N type Dummy grade 10×10×0.35mm silicon carbide wafer

Sku. 188718
$ 30 $ 35 save   $5

sic type*

4h-n 6h-n

grade*

dummy

size*

10×10×0.35mm
Quantity:
- +
piece(s)
( Min. Order 10 )
Stock:
10000 in Stock
Shipping:
$ 280
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Estimated delivery time : 4-7 working days. See details
Total Price:
$ 300 $ 350 (Save and Extra $50 )

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SiC Square wafer 4H-N type Dummy grade 10×10×0.35mm silicon carbide wafer

SiC Square wafer 4H-N type Dummy grade 10×10×0.35mm silicon carbide wafer

SiC Square wafer 4H-N type Dummy grade 10×10×0.35mm silicon carbide wafer

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  • Description
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Abstract

This high-quality 4H-N Silicon Carbide (SiC) wafer is meticulously engineered to meet advanced application requirements in electronics and optoelectronics. The wafer is characterized by its precise dimensions, low defect density, superior doping concentration, and excellent surface quality. Its unique features make it suitable for high-performance power devices, RF devices, and other cutting-edge semiconductor applications.


Specifications

Physical Dimensions:

  • Size: 10 mm x 10 mm (tolerance: +/- 1 mm)
  • Thickness: 350 μm (tolerance: +/- 25 μm)

Crystal Orientation:

  • Off-Axis Angle: 4° +/- 0.5°
  • Primary Orientation: <0001>

Micropipe Density (MPD):

  • Less than 15 cm², ensuring minimal defects and high reliability for demanding applications.

Doping Concentration:

  • Type: N-Type
  • Concentration: Approximately 1×10181 \times 10^{18}/cm³, providing optimal carrier density for efficient electrical performance.

Electrical Resistivity:

  • Range: 0.015–0.025 Ohm-cm
  • Perfectly suited for high-power and high-frequency devices requiring low resistive losses.

Surface Quality:

  • C-Face (Polished): Roughness Ra ≤ 1 nm, marked with a dot for easy identification.
  • Si-Face (Chemical Mechanical Polishing, CMP): Roughness Ra ≤ 0.5 nm, achieving an ultra-smooth surface ideal for device fabrication.

Applications

High-Power Devices

  • The low resistivity and high doping concentration make this wafer ideal for power MOSFETs, Schottky diodes, and other high-power electronics, ensuring superior thermal conductivity and operational stability.

Radio Frequency (RF) Applications

  • The material's excellent electrical properties and low defect density are perfect for RF amplifiers and switches used in wireless communication systems.

Optoelectronic Devices

  • The SiC wafer's advanced surface smoothness and crystal quality support light-emitting diodes (LEDs), laser diodes, and other optoelectronic components.

Research & Development

  • With precise specifications and high-quality standards, the wafer is a valuable resource for R&D in semiconductor materials and device innovation.

Advantages

  • High Reliability: Low micropipe density ensures fewer defects, improving device performance and lifespan.
  • Superior Surface Quality: Ultra-smooth surfaces minimize scattering and defects during device processing.
  • Precision Engineering: Tight tolerances on size and orientation for consistency and repeatability in manufacturing.
  • Optimized Doping: Tailored electrical properties to meet the needs of demanding high-performance applications.

This high-precision 4H-N SiC wafer is a premium choice for manufacturers and researchers seeking reliable and advanced material solutions for next-generation technologies.

Size

10 mm x 10 mm (+/- 1mm)

Thickness

350 um +/- 25 um (N type)

Crystal Orientation

4 +/- 0.5 deg off axis <0001>

Micropipe Density (MPD)less than 15 cm-2
Doping Concentration

N-type: ~ 1E18/cm3

Electrical Resistivity

4H-N

0.015~0.025 Ohm-cm

Surface Roughness

Polish Ra 1 nm (C face, marked with a dot)

CMP Ra 0.5 nm (Si face)

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  • Shipping Policy

    Our products are shipped from China, the dispatching date will be commenced in few business days after the finishing of QC from the related department.
    Detailed tracking information will be offered to your mailbox in an automatic manner as long as we officially dispatched your package from our sorting center.
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    It occasionally comes to the situation for no displaying of tracking information after the receiving of shipment notification. Please be advised to wait for 1-2 business days until the updating of pertinent tracking information in your account center.
  • Expedited shipment

    The changing of the shipping methods may have occurred when we are noticed from customer for the needing of rush order or lower rate of shipment delay. The related request is acceptable whenever in prior of the order is dispatched and heading to the designated shipping address.
    Note: (PO) boxes or FPO/APO military addresses can only be shipped out by standard shipping method).
    The shipping fare for the expedited shipment method may higher than the standard one you chose for, then please be aware that you may ask to pay for the balance for the pertinent shipment substitution. You are welcome to contact our customer service via “contact us” for further inquiry and requisition.
  • Shipping cost all about

    It is deeply appreciated to take your kind pardon for any misunderstanding about the shipping price due to the package is shipped from China.
    The contract we have stipulated with FedEx, DHL, UPS and EMS is already set and therefore all merchandise is sent via Air rather than Ground. While this may not be the most cost effective for all customers, in terms of delivery time, ease of shipment and reliability we have determined that this is the most effective overall.
    The shipping cost for all merchandises are displayed by adding items to your shipping bag, you can estimate shipping time and cost and acquire more shipping cost information from our site.
  • International Shipping

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