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SiC wafer 2inch 0.33±0.025mm production prime grade 4H-N type
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SiC wafer 2inch 0.33±0.025mm production prime grade 4H-N type

Sku. 188450
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SiC wafer 2inch 0.33±0.025mm production prime grade 4H-N type

SiC wafer 2inch 0.33±0.025mm production prime grade 4H-N type

SiC wafer 2inch 0.33±0.025mm production prime grade 4H-N type

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Abstract

This 2-inch (50.6 mm diameter) 4H-N type Silicon Carbide (SiC) wafer is designed for high-performance MOS (Metal-Oxide-Semiconductor) devices. Offering exceptional thermal stability, low defect density, and precise electrical properties, it is a preferred choice for power electronics, RF applications, and high-temperature semiconductors. The wafer's robust properties enable the development of efficient, reliable, and high-power devices.


Properties

Physical Specifications:

  • Diameter: 2 inches (50.6 mm)
  • Thickness: Customizable based on specific device requirements.

Crystal Structure:

  • Polytype: 4H-SiC (Hexagonal)
  • Crystal Orientation: Tailored for MOS device optimization.

Micropipe Density (MPD):

  • Extremely low (<15 cm²), ensuring structural integrity and uniformity.

Electrical Properties:

  • Type: N-type doping for high electron mobility.
  • Doping Concentration: Precisely controlled to meet MOS device specifications.
  • Electrical Resistivity: Tuned for low resistive losses and high-efficiency device operation.

Thermal Properties:

  • Exceptional thermal conductivity ensures effective heat dissipation, critical for high-power and high-temperature applications.

Surface Quality:

  • Polished and CMP-treated surfaces with roughness Ra ≤ 0.5 nm for defect-free and high-yield device fabrication.

Applications

Power Electronics

  • Ideal for power MOSFETs, IGBTs, and Schottky diodes used in industrial and automotive applications. The wafer supports high breakdown voltage and efficient switching performance.

Radio Frequency (RF) Devices

  • Enables the development of RF amplifiers and switches, delivering high-frequency operation with minimal energy loss.

High-Temperature Electronics

  • Robust thermal stability makes this wafer suitable for aerospace, military, and other demanding environments requiring semiconductors that operate reliably at elevated temperatures.

Research and Prototyping

  • A reliable substrate for academic and industrial R&D in next-generation semiconductor technologies.

Advantages

  • High Purity and Structural Integrity: Ensures long-lasting and reliable device performance.
  • Excellent Thermal and Electrical Characteristics: Enhances device efficiency and operational stability.
  • Low Defect Density: Reduces the probability of device failure, improving overall yield.
  • Customizable: Tailored specifications to meet unique customer requirements for MOS device production.

The 2-inch 4H-N Silicon Carbide wafer is a cutting-edge substrate that empowers device manufacturers to build high-efficiency, high-power, and high-temperature semiconductors for a range of advanced applications. Its superior quality and precision engineering make it a trusted choice for researchers and industrial leaders alike.


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  • Shipping Policy

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