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Your position:  Home / SiC wafer / 188625
6inch SiC Wafer 4H-N 4H-SEMI HPSI type Dummy grade Prime/Production garde research grade thickness 350um/500um
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6inch SiC Wafer 4H-N 4H-SEMI HPSI type Dummy grade Prime/Production garde research grade thickness 350um/500um

Sku. 188625
$ 368 $ 370 save   $2

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Dummy grade prime/production grade Research grade

Type*

4H-N 4H-SEMI HPSI
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100000 in Stock
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Estimated delivery time : 4-7 working days. See details
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6inch SiC Wafer 4H-N 4H-SEMI HPSI type Dummy grade Prime/Production garde research grade thickness 350um/500um

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6inch SiC Wafer 4H-N 4H-SEMI HPSI type Dummy grade Prime/Production garde research grade thickness 350um/500um

6inch SiC Wafer 4H-N 4H-SEMI HPSI type Dummy grade Prime/Production garde research grade thickness 350um/500um

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Product Overview: 6-Inch Silicon Carbide (SiC) Wafer

Type: 4H-N, 4H-SEMI, HPSI
Grades: Dummy Grade, Prime/Production Grade, Research Grade
Thickness Options: 350 μm, 500 μm

Abstract

The 6-inch Silicon Carbide (SiC) wafer is a cutting-edge substrate material designed for advanced electronic and optoelectronic applications. Available in various grades, including Dummy, Prime, and Research, these wafers provide unmatched thermal, electrical, and mechanical properties. Their adaptability makes them suitable for power devices, RF components, and high-frequency systems, contributing significantly to the advancement of next-generation technologies.

Key Properties

  1. Material Specifications:

    • Type: 4H-N (n-type), 4H-SEMI, HPSI (High-Purity Semi-Insulating).
    • Diameter: 6 inches (150 mm).
    • Thickness: 350 μm or 500 μm, depending on requirements.

  2. Wafer Orientation:

    • Off-axis: 4.0° toward <1120> ± 0.5° for 4H-N.
    • On-axis: <0001> ± 0.5° for HPSI.

  3. Grades and Quality:

    • Dummy Grade: Suitable for calibration and non-critical tests.
    • Production Grade: Optimized for commercial-scale device production.
    • Research Grade: High-purity materials for innovative R&D projects.

  4. Electrical Properties:

    • Resistivity:
      • 4H-N: 0.015–0.028 Ω·cm.
      • HPSI: ≥1E10 Ω·cm.

  5. Surface Quality:

    • Polish: Ra ≤ 1 nm.
    • CMP (Chemical Mechanical Polishing): Ra ≤ 0.2 nm.
    • Minimal defects: low micropipe density and threading dislocations.

  6. Mechanical Precision:

    • Total Thickness Variation (TTV): ≤5 μm (Research), ≤15 μm (Production).
    • Warp/Bow: ≤25 μm for high-precision applications.

  7. Edge and Structural Features:

    • Edge exclusion: 3 mm.
    • No significant cracks, chips, or contamination.

Applications

  1. Power Electronics:

    • SiC wafers are essential for high-performance power devices, such as MOSFETs and IGBTs, providing superior thermal conductivity and energy efficiency.
    • Widely used in electric vehicles (EVs), renewable energy systems, and industrial inverters.

  2. RF and Microwave Devices:

    • High-purity semi-insulating SiC wafers enable the development of GaN-on-SiC RF amplifiers and high-frequency communication components.

  3. Optoelectronic Devices:

    • Applications in UV photodetectors, laser diodes, and high-power LEDs.

  4. Research and Development:

    • Suitable for academia and advanced laboratories focusing on novel material science and next-generation semiconductor technologies.

  5. Dummy Applications:

    • Dummy-grade wafers are utilized for equipment calibration, process monitoring, and quality control without risking high-value production wafers.

This versatile, high-performance SiC wafer portfolio meets the stringent demands of both industrial-scale production and cutting-edge research, positioning it as a cornerstone material for modern electronics.

AttributeSelected Grade (Z Grade)Production Grade (P Grade)Dummy Grade (D Grade)
Diameter149.5 mm ~ 150.0 mm149.5 mm ~ 150.0 mm149.5 mm ~ 150.0 mm
Thickness4H-N: 350 μm ± 15 μm
4H-SI: 500 μm ± 15 μm		4H-N: 350 μm ± 25 μm
4H-SI: 500 μm ± 25 μm		4H-N: 350 μm ± 25 μm
4H-SI: 500 μm ± 25 μm
Wafer OrientationOff-axis: 4.0° toward <1120> ± 0.5° for 4H-N
On-axis: <0001> ± 0.5° for 4H-SI		Same as Z GradeSame as Z Grade
Micropipe Density4H-N: ≤0.2 cm⁻²
4H-SI: ≤1 cm⁻²		4H-N: ≤2 cm⁻²
4H-SI: ≤5 cm⁻²		4H-N: ≤15 cm⁻²
4H-SI: ≤15 cm⁻²
Resistivity4H-N: 0.015 ~ 0.024 Ω·cm
4H-SI: ≥1E10 Ω·cm		4H-N: 0.015 ~ 0.028 Ω·cm
4H-SI: ≥1E5 Ω·cm		Same as P Grade
Primary Flat Orientation{10-10} ± 5.0°Same as Z GradeSame as Z Grade
Primary Flat Length4H-N: 47.5 mm ± 2.0 mm
4H-SI: Notch		Same as Z GradeSame as Z Grade
Edge Exclusion3 mmSame as Z GradeSame as Z Grade
LTV/TTV/Bow/Warp≤2.5 μm / ≤6 μm / ≤25 μm / ≤35 μm≤5 μm / ≤15 μm / ≤40 μm / ≤60 μmSame as P Grade
RoughnessPolish: Ra ≤ 1 nm
CMP: Ra ≤ 0.2 nm		Polish: Ra ≤ 1 nm
CMP: Ra ≤ 0.5 nm		Same as P Grade
Edge CracksNoneCumulative length ≤ 20 mm, single length ≤ 2 mmSame as P Grade
Hex PlatesCumulative area ≤ 0.05%Cumulative area ≤ 0.1%Same as P Grade
Polytype AreasNoneCumulative area ≤ 3%Same as P Grade
Carbon InclusionsCumulative area ≤ 0.05%Cumulative area ≤ 3%Same as P Grade
Silicon Surface ScratchesNoneCumulative length ≤ 1 × wafer diameterSame as P Grade
Edge ChipsNone permitted ≥0.2 mm width and depth7 allowed, ≤ 1 mm eachSame as P Grade
Threading Screw Dislocation (TSD)≤500 cm⁻²N/AN/A
Base Plane Dislocation (BPD)≤1000 cm⁻²N/AN/A
Silicon Surface ContaminationNoneSame as Z GradeSame as Z Grade
PackagingMulti-wafer Cassette or Single Wafer ContainerSame as Z GradeSame as Z Grade
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  • Shipping Policy

    Our products are shipped from China, the dispatching date will be commenced in few business days after the finishing of QC from the related department.
    Detailed tracking information will be offered to your mailbox in an automatic manner as long as we officially dispatched your package from our sorting center.
    Customer is advised to check more tracking information from “My Account” after the account sign in.
    It occasionally comes to the situation for no displaying of tracking information after the receiving of shipment notification. Please be advised to wait for 1-2 business days until the updating of pertinent tracking information in your account center.

  • Expedited shipment

    The changing of the shipping methods may have occurred when we are noticed from customer for the needing of rush order or lower rate of shipment delay. The related request is acceptable whenever in prior of the order is dispatched and heading to the designated shipping address.
    Note: (PO) boxes or FPO/APO military addresses can only be shipped out by standard shipping method).
    The shipping fare for the expedited shipment method may higher than the standard one you chose for, then please be aware that you may ask to pay for the balance for the pertinent shipment substitution. You are welcome to contact our customer service via “contact us” for further inquiry and requisition.

  • Shipping cost all about

    It is deeply appreciated to take your kind pardon for any misunderstanding about the shipping price due to the package is shipped from China.
    The contract we have stipulated with FedEx, DHL, UPS and EMS is already set and therefore all merchandise is sent via Air rather than Ground. While this may not be the most cost effective for all customers, in terms of delivery time, ease of shipment and reliability we have determined that this is the most effective overall.
    The shipping cost for all merchandises are displayed by adding items to your shipping bag, you can estimate shipping time and cost and acquire more shipping cost information from our site.

  • International Shipping

    International shipping costs are calculated in U.S. currency based on estimated shipment weight and destination. Shipping costs for orders placed on the website are fairly accurate, but there are times when those estimates are incorrect. If we need to adjust shipping charges for your order we will contact you to authorize those additional shipping charges.

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