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Your position:  Home / SiC wafer / 188616
4inch sic wafer 4H-N 4H-SEMI HPSI type prime grade dummy grade research grade thickness 350um 500um
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4inch sic wafer 4H-N 4H-SEMI HPSI type prime grade dummy grade research grade thickness 350um 500um

Sku. 188616
$ 295 $ 300 save   $5

Grade*

Dmmy grade Prime grade Research grade

Type*

4H-N 4H-SEMI HPSI
Quantity:
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Stock:
1000000 in Stock
Shipping:
$ 44.65
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Estimated delivery time : 4-7 working days. See details
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$ 295 $ 300 (Save and Extra $5 )

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4inch sic wafer 4H-N 4H-SEMI HPSI type prime grade dummy grade research grade thickness 350um 500um

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    CostDelivery TimeTracking

  • Fedex IP

    $ 44.65 4-7 daysAvailable

  • UPS Express Saver

    $ 100 4-7 daysAvailable

  • DHL

    $ 100 4-7 daysAvailable

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4inch sic wafer 4H-N 4H-SEMI HPSI type prime grade dummy grade research grade thickness 350um 500um

4inch sic wafer 4H-N 4H-SEMI HPSI type prime grade dummy grade research grade thickness 350um 500um

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  • Description
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Product Introduction: 4-Inch Diameter Silicon Carbide (SiC) Substrate

Abstract

The 4-inch Silicon Carbide (SiC) substrate is an advanced material designed for high-performance semiconductor applications. Available in three grades—Selected (Z Grade), Production (P Grade), and Dummy (D Grade)—these substrates offer exceptional reliability, precise material properties, and high durability, tailored to meet the demands of cutting-edge industries such as power electronics, optoelectronics, and high-frequency applications.

Properties

  • Size and Dimensions

    • Diameter: 99.5 mm ~ 100.0 mm
    • Thickness:
      • 4H-N: 350 μm ± 15 μm (Z Grade), 350 μm ± 25 μm (P/D Grade)
      • 4H-SI: 500 μm ± 15 μm (Z Grade), 500 μm ± 25 μm (P/D Grade)

  • Material Orientation

    • 4H-N: Off-axis, 4.0° toward <1120> ± 0.5°
    • 4H-SI: On-axis, <0001> ± 0.5°

  • Electrical Properties

    • Resistivity:
      • 4H-N: 0.015 ~ 0.024 Ω·cm (Z Grade), 0.015 ~ 0.028 Ω·cm (P/D Grade)
      • 4H-SI: ≥1E10 Ω·cm (Z Grade), ≥1E5 Ω·cm (P/D Grade)
    • Micropipe Density (MPD):
      • ≤0.2 cm⁻² (Z Grade), ≤2 cm⁻² (P Grade), ≤15 cm⁻² (D Grade)

  • Surface and Structural Quality

    • Surface Roughness:
      • Polished: Ra ≤ 1 nm
      • CMP: Ra ≤ 0.2 nm (Z Grade), Ra ≤ 0.5 nm (P/D Grade)
    • Total Thickness Variation (TTV), Bow, and Warp:
      • ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm (Z Grade)
      • ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm (P/D Grade)

  • Defects and Tolerance

    • Minimal defects, including strict limitations on edge cracks, hex plates, polytype areas, and carbon inclusions.
    • Threading Screw Dislocation (TSD): ≤500 cm⁻² (Z Grade).

  • Packaging

    • Delivered in multi-wafer cassettes or single-wafer containers to ensure safety and cleanliness.

Applications

The 4-inch SiC substrate is ideal for use in:

  1. Power Electronics

    • High-voltage, high-temperature devices such as Schottky diodes, MOSFETs, and IGBTs for efficient energy conversion and distribution.

  2. Optoelectronics

    • Devices like LEDs, laser diodes, and photodiodes that require a robust and thermally stable platform.

  3. High-Frequency Electronics

    • RF and microwave devices for communication systems, radar, and satellite technologies.

  4. Advanced Research and Development

    • Suitable for experimental setups requiring the highest material precision (Z Grade).

  5. Testing and Calibration

    • Dummy wafers (D Grade) provide an economical option for equipment setup and evaluation.

This comprehensive material solution is crafted to support the most demanding technological advancements with precision, quality, and adaptability.

ParameterZ Grade (Zero MPD)P Grade (Standard Production Grade)D Grade (Dummy Grade)
Diameter99.5 mm ~ 100.0 mm99.5 mm ~ 100.0 mm99.5 mm ~ 100.0 mm
Thickness (4H-N)350 μm ± 15 μm350 μm ± 25 μm350 μm ± 25 μm
Thickness (4H-SI)500 μm ± 15 μm500 μm ± 25 μm500 μm ± 25 μm
Wafer OrientationOff-axis: 4.0° toward <1120> ± 0.5° (4H-N)
On-axis: <0001> ± 0.5° (4H-SI)		Same as Z GradeSame as Z Grade
Micropipe Density (MPD)≤0.2 cm⁻² (4H-N)
≤1 cm⁻² (4H-SI)		≤2 cm⁻² (4H-N)
≤5 cm⁻² (4H-SI)		≤15 cm⁻²
Resistivity (4H-N)0.015 ~ 0.024 Ω·cm0.015 ~ 0.028 Ω·cm0.015 ~ 0.028 Ω·cm
Resistivity (4H-SI)≥1E10 Ω·cm≥1E5 Ω·cm≥1E5 Ω·cm
Primary Flat Orientation{10-10} ± 5.0°Same as Z GradeSame as Z Grade
Primary Flat Length32.5 mm ± 2.0 mmSame as Z GradeSame as Z Grade
Secondary Flat OrientationSilicon face up: 90° CW from Prime Flat ± 5.0°Same as Z GradeSame as Z Grade
Secondary Flat Length18.0 mm ± 2.0 mmSame as Z GradeSame as Z Grade
Edge Exclusion3 mmSame as Z GradeSame as Z Grade
LTV/TTV/Bow/Warp≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm≤10 μm / ≤15 μm / ≤25 μm / ≤40 μmSame as P Grade
Roughness (Polish)Ra ≤ 1 nmRa ≤ 1 nmRa ≤ 1 nm
Roughness (CMP)Ra ≤ 0.2 nmRa ≤ 0.5 nmRa ≤ 0.5 nm
Edge CracksNoneCumulative length ≤ 10 mm
Single crack ≤ 2 mm		Same as P Grade
Hex PlatesCumulative area ≤ 0.05%Cumulative area ≤ 0.1%Same as P Grade
Polytype AreasNoneCumulative area ≤ 3%Same as P Grade
Visual Carbon InclusionsCumulative area ≤ 0.05%Cumulative area ≤ 3%Same as P Grade
Silicon Surface ScratchesNoneCumulative length ≤ 1× wafer diameterSame as P Grade
Edge ChipsNone (≥0.2 mm width/depth)5 allowed, ≤1 mm eachSame as P Grade
Silicon Surface ContaminationNoneNoneSame as P Grade
Threading Screw Dislocation (TSD)≤500 cm⁻²N/AN/A
PackagingMulti-wafer Cassette or Single Wafer ContainerSame as Z GradeSame as Z Grade

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  • Shipping Policy

    Our products are shipped from China, the dispatching date will be commenced in few business days after the finishing of QC from the related department.
    Detailed tracking information will be offered to your mailbox in an automatic manner as long as we officially dispatched your package from our sorting center.
    Customer is advised to check more tracking information from “My Account” after the account sign in.
    It occasionally comes to the situation for no displaying of tracking information after the receiving of shipment notification. Please be advised to wait for 1-2 business days until the updating of pertinent tracking information in your account center.

  • Expedited shipment

    The changing of the shipping methods may have occurred when we are noticed from customer for the needing of rush order or lower rate of shipment delay. The related request is acceptable whenever in prior of the order is dispatched and heading to the designated shipping address.
    Note: (PO) boxes or FPO/APO military addresses can only be shipped out by standard shipping method).
    The shipping fare for the expedited shipment method may higher than the standard one you chose for, then please be aware that you may ask to pay for the balance for the pertinent shipment substitution. You are welcome to contact our customer service via “contact us” for further inquiry and requisition.

  • Shipping cost all about

    It is deeply appreciated to take your kind pardon for any misunderstanding about the shipping price due to the package is shipped from China.
    The contract we have stipulated with FedEx, DHL, UPS and EMS is already set and therefore all merchandise is sent via Air rather than Ground. While this may not be the most cost effective for all customers, in terms of delivery time, ease of shipment and reliability we have determined that this is the most effective overall.
    The shipping cost for all merchandises are displayed by adding items to your shipping bag, you can estimate shipping time and cost and acquire more shipping cost information from our site.

  • International Shipping

    International shipping costs are calculated in U.S. currency based on estimated shipment weight and destination. Shipping costs for orders placed on the website are fairly accurate, but there are times when those estimates are incorrect. If we need to adjust shipping charges for your order we will contact you to authorize those additional shipping charges.

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