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2inch sic wafer 6h-n type 330±25um SiC Silicon Carbide Wafer Double Side Polished 2inch  Dummy grade
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2inch sic wafer 6h-n type 330±25um SiC Silicon Carbide Wafer Double Side Polished 2inch Dummy grade

Sku. 188650
$ 295 $ 300 save   $5

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6H-N
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2inch sic wafer 6h-n type 330±25um SiC Silicon Carbide Wafer Double Side Polished 2inch  Dummy grade

2inch sic wafer 6h-n type 330±25um SiC Silicon Carbide Wafer Double Side Polished 2inch  Dummy grade

2inch sic wafer 6h-n type 330±25um SiC Silicon Carbide Wafer Double Side Polished 2inch Dummy grade

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  • Description
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Silicon Carbide Substrate/Wafer Product Description

Silicon carbide (SiC) substrates and wafers are advanced materials designed for high-performance applications in demanding environments. With a 6H crystal structure, these wafers exhibit exceptional mechanical strength, thermal conductivity, and electrical properties, making them ideal for cutting-edge industries such as power electronics, RF communication, and renewable energy systems.


Key Specifications

  • Crystal Structure: 6H-SiC with a lattice parameter of a = 3.073 Å and c = 15.117 Å.
  • Stacking Sequence: 6H (ABCACB).
  • Grades Available: Production Grade, Research Grade, and Dummy Grade.
  • Conductivity Type: N-type (conductive) or Semi-Insulating (SI).
  • Bandgap: Wide bandgap of 3.23 eV for high-temperature operation.
  • Thermal Conductivity: 3.2–4.9 W/cm·K at 300K for superior heat dissipation.
  • Hardness: Mohs scale hardness of 9.2 ensures durability and wear resistance.
  • Dielectric Constants: e(11) = e(22) = 9.66, e(33) = 10.33.
  • Resistivity:
    • N-type: 0.02–0.1 Ω·cm.
    • Semi-Insulating: >1×10⁷ Ω·cm.

Product Features

  1. Exceptional Thermal Management: High thermal conductivity enhances reliability in power-intensive applications.
  2. Wide Bandgap Efficiency: Operates effectively under high voltages and temperatures.
  3. Versatility in Conductivity: Choice between N-type for electronic conductivity and SI for RF applications.
  4. Robust Mechanical Properties: Mohs hardness of 9.2 ensures resilience against physical wear and tear.
  5. High Precision and Quality: Suitable for both production and research environments.

Applications

  • Power Electronics:
    Efficient for MOSFETs, IGBTs, and energy converters in electric vehicles and industrial equipment.
  • RF and Microwave Technology:
    Supports GaN-on-SiC devices for high-frequency communication systems, including 5G.
  • Renewable Energy Systems:
    Enhances the efficiency of solar inverters and wind turbine systems.
  • Aerospace and Sensors:
    Functions reliably in extreme temperature conditions.
  • LEDs and Optoelectronics:
    Suitable as a substrate for GaN epitaxial growth in lighting and display technologies.

Summary

Silicon carbide wafers deliver unmatched performance in high-power and high-frequency applications. Available in customizable grades and conductivity types, these 6H-SiC substrates are an essential material for advancing the next generation of electronic and energy

ParameterDetails
Product NameSilicon carbide substrate, Silicon carbide wafer, SiC wafer, SiC substrate
Crystal Structure6H
Lattice Parameters6H (a = 3.073 Å, c = 15.117 Å)
Stacking Sequence6H: ABCACB
GradeProduction Grade, Research Grade, Dummy Grade
Conductivity TypeN-type or Semi-Insulating
Bandgap3.23 eV
Hardness9.2 (Mohs scale)
Thermal Conductivity (@300K)3.2–4.9 W/cm·K
Dielectric Constantse(11) = e(22) = 9.66, e(33) = 10.33
ResistivityN-type: 0.02–0.1 Ω·cm, Semi-Insulating: >1×10⁷ Ω·cm

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  • Shipping Policy

    Our products are shipped from China, the dispatching date will be commenced in few business days after the finishing of QC from the related department.
    Detailed tracking information will be offered to your mailbox in an automatic manner as long as we officially dispatched your package from our sorting center.
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    It occasionally comes to the situation for no displaying of tracking information after the receiving of shipment notification. Please be advised to wait for 1-2 business days until the updating of pertinent tracking information in your account center.
  • Expedited shipment

    The changing of the shipping methods may have occurred when we are noticed from customer for the needing of rush order or lower rate of shipment delay. The related request is acceptable whenever in prior of the order is dispatched and heading to the designated shipping address.
    Note: (PO) boxes or FPO/APO military addresses can only be shipped out by standard shipping method).
    The shipping fare for the expedited shipment method may higher than the standard one you chose for, then please be aware that you may ask to pay for the balance for the pertinent shipment substitution. You are welcome to contact our customer service via “contact us” for further inquiry and requisition.
  • Shipping cost all about

    It is deeply appreciated to take your kind pardon for any misunderstanding about the shipping price due to the package is shipped from China.
    The contract we have stipulated with FedEx, DHL, UPS and EMS is already set and therefore all merchandise is sent via Air rather than Ground. While this may not be the most cost effective for all customers, in terms of delivery time, ease of shipment and reliability we have determined that this is the most effective overall.
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  • International Shipping

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